Bellodi, Marcello; Martino, João Antonio 
Source: Journal Integrated Circuits and Systems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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BELLODI, Marcello e MARTINO, João Antonio. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, v. 1, n. 2, p. 31-35, 2004Tradução . . Disponível em: https://doi.org/10.29292/jics.v1i2.261. Acesso em: 28 abr. 2024.APA
Bellodi, M., & Martino, J. A. (2004). Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, 1( 2), 31-35. doi:10.29292/jics.v1i2.261NLM
Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2024 abr. 28 ] Available from: https://doi.org/10.29292/jics.v1i2.261Vancouver
Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2024 abr. 28 ] Available from: https://doi.org/10.29292/jics.v1i2.261
